A relationship for temperature dependence of threshold current for 1.3-μm compressively strained-layer multiple-quantum-well lasers

Author

Huang, R. ; Simmons, J.G. ; Jessop, Paul E. ; Evans, J.

Author_Institution

Centre for Electrophotonic Mater. & Devices, McMaster Univ., Hamilton, Ont., Canada

Volume

9

Issue

7

fYear

1997

fDate

7/1/1997 12:00:00 AM

Firstpage

892

Lastpage

894

Abstract

Assuming that the differential gain is a linear function of temperature, a formula is derived to describe the threshold current as a function of temperature. A maximum operating temperature, T_max which is related to the fundamental physical properties (such as differential gain, free carrier loss and intervalence band absorption) of the lasers appears naturally in the formula, at which lasing ceases. To experimentally investigate the relationship, studies were carried out on 1.3-μm strained-layer multiple quantum well (SL-MQW) lasers with variant 0.7% compressively strained wells. The formula shows a good correlation with threshold current versus temperature data over the temperature range 200 K to 450 K.

Keywords

carrier density; laser theory; laser transitions; optical losses; quantum well lasers; waveguide lasers; 1.3 mum; 200 to 400 K; SL-MQW; compressively strained-layer multiple-quantum-well lasers; differential gain; free carrier loss; fundamental physical properties; intervalence band absorption; linear function; maximum operating temperature; ridge waveguide lasers; temperature dependence; threshold current; Absorption; Curve fitting; Laser theory; Optical waveguides; Quantum well lasers; Semiconductor lasers; Temperature dependence; Temperature distribution; Threshold current; Waveguide lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.593336

Filename

593336