• DocumentCode
    1261280
  • Title

    Polarisation insensitive InGaAs/InGaAsP electro-absorption intensity modulator using quantum well intermixing process

  • Author

    Ng, S.L. ; Lim, H.S. ; Lam, Y.L. ; Chan, Y.C. ; Ooi, B.S. ; Aimez, V. ; Beauvais, J. ; Beerens, J.

  • Author_Institution
    Photonics Res. Group, Nanyang Technol. Univ., Singapore
  • Volume
    38
  • Issue
    5
  • fYear
    2002
  • fDate
    2/28/2002 12:00:00 AM
  • Firstpage
    241
  • Lastpage
    242
  • Abstract
    A quantum well intermixing process for the fabrication of polarisation insensitive electro-absorption intensity modulators on an InGaAs/InGaAsP heterostructure is reported. This technique is based on low-energy arsenic and phosphorus ion implantation
  • Keywords
    III-V semiconductors; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; ion implantation; optical communication equipment; optical fibre communication; semiconductor quantum wells; InGaAs-InGaAsP; InGaAs/InGaAsP; electro-absorption intensity modulator; low-energy ion implantation; optical fibre communications; quantum well intermixing process; waveguide based quantum well optical modulators;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20020151
  • Filename
    990220
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1261280