High performance 0.25 μm gate-length AlGaN/GaN HEMTs on sapphire with transconductance of over 400 mS/mm

Author

Kumar, V. ; Lu, W. ; Khan, M.Asif ; Schwindt, R. ; Kuliev, A. ; Simin, G. ; Yang, J. ; Asif Khan, M. ; Adesida, I.

Author_Institution

Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA

Volume

38

Issue

5

fYear

2002

fDate

2/28/2002 12:00:00 AM

Firstpage

252

Lastpage

253

Abstract

Metal organic chemical vapour deposition-grown AlGaN/GaN high electron mobility transistors (HEMTs) having record high transconductance of over 400 mS/mm have been fabricated on sapphire substrates. These 0.25 μm gate-length devices exhibited maximum drain current density as high as 1.4 A/mm, unity gain cutoff frequency (f_T) of 85 GHz, and maximum frequency of oscillation (f_max) of 151 GHz. The f_T of 85 GHz and f_max of 151 GHz are the highest ever reported values for 0.25 μm gate-length GaN-based HEMTs

Keywords

III-V semiconductors; MOCVD coatings; aluminium compounds; gallium compounds; high electron mobility transistors; sapphire; wide band gap semiconductors; 0.25 micron; 151 GHz; 85 GHz; Al₂O₃; AlGaN-GaN; AlGaN/GaN high electron mobility transistor; drain current density; maximum frequency of oscillation; metalorganic chemical vapour deposition; sapphire substrate; transconductance; unity gain cutoff frequency;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20020178

Filename

990227