• DocumentCode
    1261341
  • Title

    Low-temperature polysilicon TFT with counter-doped lateral body terminal

  • Author

    Lee, Min-Cheol ; Juhn-Suk Yoo ; Han, Min-Koo

  • Author_Institution
    Sch. of Electr. Eng. (50), Seoul Nat. Univ., South Korea
  • Volume
    38
  • Issue
    5
  • fYear
    2002
  • fDate
    2/28/2002 12:00:00 AM
  • Firstpage
    255
  • Lastpage
    256
  • Abstract
    A low-temperature polysilicon thick film transistor (TFT) employing a counter-doped lateral body terminal (LBT) is proposed and fabricated to suppress the kink current and to enhance the stability of polysilicon in the TFT. In the experiment, the LBT effectively reduced the kink effect by collecting the counter-polarity carriers
  • Keywords
    elemental semiconductors; silicon; thin film transistors; Si; counter-doped lateral body terminal; kink current; low-temperature polysilicon thin film transistor; stability;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20020152
  • Filename
    990229
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1261341