• DocumentCode
    1261612
  • Title

    IDDQ testing for deep-submicron ICs: challenges and solutions

  • Author

    Chen, Zhanping ; Wei, Liqiong ; Keshavarzi, Ali ; Roy, Kaushik

  • Author_Institution
    Intel, Hillsboro, OR, USA
  • Volume
    19
  • Issue
    2
  • fYear
    2002
  • Firstpage
    24
  • Lastpage
    33
  • Abstract
    The use of low-threshold devices in scaled low-voltage CMOS circuits leads to increased intrinsic leakage current. As a result, I DDQ testing requires different techniques to remain effective
  • Keywords
    CMOS integrated circuits; integrated circuit testing; leakage currents; low-power electronics; CMOS circuits; IDDQ testing; deep-submicron IC; intrinsic leakage current; low-threshold devices; scaled low-voltage circuits; CMOS logic circuits; Circuit faults; Circuit testing; Costs; Fault currents; Fault detection; Frequency; Leak detection; Leakage current; Logic gates;
  • fLanguage
    English
  • Journal_Title
    Design & Test of Computers, IEEE
  • Publisher
    ieee
  • ISSN
    0740-7475
  • Type

    jour

  • DOI
    10.1109/54.990439
  • Filename
    990439
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1261612