Energy-Efficient Hybrid Silicon Electroabsorption Modulator for 40-Gb/s 1-V Uncooled Operation

Author

Tang, Yongbo ; Peters, Jonathan D. ; Bowers, John E.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of California Santa Barbara, Santa Barbara, CA, USA

Volume

24

Issue

19

fYear

2012

Firstpage

1689

Lastpage

1692

Abstract

This letter demonstrates a high-speed and energy-efficient lumped electroabsorption modulator on the hybrid silicon platform for an uncooled operation at up to 80^°C . This 100-μm-long modulator has a 3-dB bandwidth of 30 GHz. Eye diagrams measured at the temperatures of 20^°C , 40^°C, 60 ^°C, and 80^°C with corresponding adjustment on the input wavelength and the bias voltage show a dynamic extinction ratio of around 5 dB at 40 Gb/s with a 1-V drive voltage swing and an energy consumption of 112 fJ/bit.

Keywords

electro-optical modulation; electroabsorption; energy consumption; extinction coefficients; integrated optics; silicon-on-insulator; Si; bias voltage; bit rate 40 Gbit/s; drive voltage swing; dynamic extinction ratio; energy consumption; eye diagrams; high-speed energy-efficient hybrid silicon electroabsorption modulator; hybrid silicon platform; size 100 mum; temperature 20 degC to 80 degC; uncooled operation; Energy consumption; Modulation; Optical attenuators; Semiconductor device measurement; Silicon; Temperature measurement; Voltage measurement; Electroabsorption; integrated optics; silicon-on-insulator (SOI); waveguide modulator;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2012.2212702

Filename

6264091