• DocumentCode
    1261715
  • Title

    Comments on ´Early voltage in very-narrow-base bipolar transistors´ by D.J. Roulston

  • Author

    Liou, Juin J.

  • Author_Institution
    Dept. of Electr. Eng., Univ. of Central Florida, Orlando, FL, USA
  • Volume
    11
  • Issue
    5
  • fYear
    1990
  • fDate
    5/1/1990 12:00:00 AM
  • Firstpage
    236
  • Abstract
    An improved Early voltage V/sub A/ model for an n/sup +//p/n bipolar transistor derived by D.J. Roulston (see ibid., vol.11, no.2, p.88-9, 1990) is shown to be less accurate, and a new voltage model is derived.<>
  • Keywords
    bipolar transistors; semiconductor device models; Early voltage; model; n/sup +//p/n bipolar transistor; very-narrow-base bipolar transistors; voltage model; Bipolar transistors; Current density; Current-voltage characteristics; Electron devices; Electron emission; Photonic band gap; Predictive models; Silicon; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/55.55261
  • Filename
    55261
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1261715