Magnetic and electric properties of Sn-oxide/M (M=Fe, Ni, Co) multilayers

Author

Matsuyama, K. ; Nishihata, K. ; Komatsu, S. ; Nozaki, Y.

Author_Institution

Dept. of Electron. Device Eng., Kyushu Univ., Fukuoka, Japan

Volume

35

Issue

5

fYear

1999

fDate

9/1/1999 12:00:00 AM

Firstpage

2901

Lastpage

2903

Abstract

Magnetic and electronic properties of novel semiconductive-oxide/ferromagnet multilayers of Sn-oxide and ferromagnetic metals (Fe, Ni, Co), deposited with a multi-target rf magnetron sputtering system, were studied. Among the studied material systems, Co/Sn-oxide sustains well-defined layer structure and ferromagnetic property for the thinnest thickness of 1 nm. A thermionic CPP transport was observed in [Co(2 nm)/Sn-oxide (4 nm)]₁₀, which activation energy was evaluated as 4.4×10^-3 erg from the thermal dependence of conductivity. Negative magnetoresistance was observed in two orthogonal directions of in-plane external fields, which confirms spin dependent transport in Sn-oxide thin film. The measured MR change is 0.6% (ΔR=0.8 Ω, R_s=140 Ω) at room temperature

Keywords

cobalt; ferromagnetic materials; iron; magnetoresistance; multilayers; negative resistance; nickel; semiconductor-metal boundaries; sputtered coatings; tin compounds; Co; Fe; Ni; Sn-oxide; SnO; activation energy; electric properties; ferromagnetic metals; in-plane external fields; layer structure; magnetic properties; multi-target RF magnetron sputtering system; negative magnetoresistance; room temperature; semiconductive-oxide/ferromagnet multilayers; spin dependent transport; thermal dependence; thermionic CPP transport; Iron; Magnetic materials; Magnetic multilayers; Magnetic properties; Magnetic semiconductors; Magnetoresistance; Semiconductor materials; Sputtering; Thermal conductivity; Transistors;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.801019

Filename

801019