Epitaxial growth of (111) oriented manganese zinc ferrite thin films and their magnetic properties

Author

Hiratsuka, N. ; Miyazaki, T. ; Kakizaki, K. ; Kwon, O.H. ; Bae, C.S.

Author_Institution

Graduate Sch. of Sci. & Eng., Saitama Univ., Urawa, Japan

Volume

35

Issue

5

fYear

1999

fDate

9/1/1999 12:00:00 AM

Firstpage

3055

Lastpage

3057

Abstract

Manganese zinc ferrite (MnZn ferrite) thin films were prepared on quartz substrates buffered by a ZnO underlayer by rf magnetron sputtering. The ZnO underlayers exhibited preferentially (001) orientation for any thickness. When Mn-Zn-Fe oxide layers as-deposited on the ZnO underlayers were annealed in reduced atmosphere at 800°C for 5 hours, single-phase spinel type ferrites were formed. The films were preferentially oriented to the [111] direction normal to the film plane. Thin ZnO underlayers successfully induced (111) orientation in plane because of good lattice matching between the ZnO and the spinel phase. Films with a composition of Mn:Zn:Fe=23:9:68 had a saturation magnetization value of 410 emu/cm³. The relationship between the composition and the magnetization for the films was similar to that for the bulk material

Keywords

annealing; ferrites; interface structure; magnetic epitaxial layers; magnetisation; manganese compounds; sputter deposition; stoichiometry; vapour phase epitaxial growth; zinc compounds; (111) orientation; (111) oriented manganese zinc ferrite thin films; 5 h; 800 C; Mn-Zn-Fe oxide layers; MnZn ferrite; SiO₂; ZnMnFe₂O₄; ZnO; ZnO underlayer; ZnO underlayers; composition; epitaxial growth; lattice matching; magnetic properties; preferential (001) orientation; quartz substrates; rf magnetron sputtering; saturation magnetization; single-phase spinel type ferrites; spinel phase; Annealing; Atmosphere; Epitaxial growth; Ferrite films; Magnetic materials; Manganese; Saturation magnetization; Sputtering; Substrates; Zinc oxide;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.801083

Filename

801083