Enhanced Programming and Erasing Speeds in P-Channel Charge-Trapping Flash Memory Device With SiGe Buried Channel

Author

Liu, Li-Jung ; Chang-Liao, Kuei-Shu ; Jian, Yi-Chuen ; Cheng, Jen-Wei ; Wang, Tien-Ko ; Tsai, Ming-Jinn

Author_Institution

Dept. of Eng. & Syst. Sci., Nat. Tsing Hua Univ., Hsinchu, Taiwan

Volume

33

Issue

9

fYear

2012

Firstpage

1264

Lastpage

1266

Abstract

The operation characteristics of p-channel TaN/ Al₂O₃/HfO₂/HfAlO₂/SiO₂/Si MAHOS-type nonvolatile memory devices with different Ge contents in a SiGe buried channel are investigated in this letter. Compared with those of a device having a conventional Si-channel, both programming and erasing speeds are significantly improved by employing a Si_0.7Ge_0.3 buried channel. Satisfactory retention and excellent endurance characteristics up to 10⁶ P/E cycles with 4.1-V memory window show that the degradation on reliability properties, if it exists, is negligible when the SiGe buried channel is introduced.

Keywords

Ge-Si alloys; aluminium compounds; hafnium compounds; integrated circuit reliability; phase change memories; MAHOS-type nonvolatile memory devices; P-channel charge-trapping flash memory device; SiGe; TaN-Al₂O₃-HfO₂-HfAlO₂-SiO₂-Si; buried channel; enhanced programming; erasing speeds; voltage 4.1 V; Electron devices; Flash memory; Logic gates; Nonvolatile memory; Programming; Silicon; Silicon germanium; Atomic layer deposition (ALD); SiGe buried channel; charge-trapping Flash memory; high-$kappa$;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2206069

Filename

6268315