• DocumentCode
    1264770
  • Title

    Optical slow-wave resonant modulation in electro-optic GaAs/AlGaAs modulators

  • Author

    Shaw, N. ; Stewart, W.J. ; Heaton, J. ; Wight, D.R.

  • Author_Institution
    Marconi Mater. Technol., Towcester, UK
  • Volume
    35
  • Issue
    18
  • fYear
    1999
  • fDate
    9/2/1999 12:00:00 AM
  • Firstpage
    1557
  • Lastpage
    1558
  • Abstract
    A new type of resonant optical intensity modulator has been developed by incorporating an optical slow-wave structure into a GaAs/AlGaAs Mach-Zehnder waveguide modulator. The first experimental results demonstrate improvements in the efficiency by factors of up to 2.9 at the resonant wavelength. The lowest switching voltage, Vπ , is 4.5 V
  • Keywords
    III-V semiconductors; Mach-Zehnder interferometers; aluminium compounds; electro-optical modulation; gallium arsenide; integrated optoelectronics; intensity modulation; optical waveguides; slow wave structures; 4.5 V; GaAs-AlGaAs; Mach-Zehnder waveguide modulator; OEIC; electro-optic modulators; optical slow-wave resonant modulation; optical slow-wave structure; resonant optical intensity modulator;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19991035
  • Filename
    802798