• DocumentCode
    1265745
  • Title

    Long wavelength GaInNAsSb/GaNAsSb multiple quantum well lasers

  • Author

    Ha, W. ; Gambin, V. ; Wistey, M. ; Bank, S. ; Yuen, H. ; Kim, S. ; Harris, J.S., Jr.

  • Author_Institution
    Solid State & Photonics Lab., Stanford Univ., CA, USA
  • Volume
    38
  • Issue
    6
  • fYear
    2002
  • fDate
    3/14/2002 12:00:00 AM
  • Firstpage
    277
  • Lastpage
    278
  • Abstract
    The high demand for 1.3-1.55 μm lasers has led to the investigation of GaInNAsSb/GaNAsSb on GaAs. In-plane lasers operating out to 1.49 μm, with threshold current density of 930 A/cm2 per quantum well and pulsed power up to 70 mW, are presented. In addition, photoluminescence out to 1.6 μm from GaInNAsSb quantum wells was observed
  • Keywords
    III-V semiconductors; current density; gallium arsenide; gallium compounds; indium compounds; laser transitions; photoluminescence; quantum well lasers; 1.3 to 1.55 micron; 1.49 micron; 1.6 micron; 70 mW; GaAs; GaInNAsSb-GaNAsSb; in-plane lasers; long wavelength GaInNAsSb/GaNAsSb multiple quantum well lasers; photoluminescence; pulsed power; threshold current density;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20020207
  • Filename
    992630
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1265745