Macroscopic simulation of quantum mechanical effects in 2-D MOS devices via the density gradient method

Author

Connelly, Daniel ; Yu, Zhiping ; Yergeau, Dan

Author_Institution

Acorn Technol., Palo Alto, CA, USA

Volume

49

Issue

4

fYear

2002

fDate

4/1/2002 12:00:00 AM

Firstpage

619

Lastpage

626

Abstract

Here, for the first time, are presented results of two-dimensional (2-D) simulations of metal-oxide-semiconductor (MOS) devices, including quantum mechanical modeling throughout the entire device region, calculated using the density gradient method. The importance of quantum mechanical modeling of the entire device structure, including the gate, source, drain, and channel, is demonstrated through one-dimensional (1-D) examples and through analysis of double and single-gated fully-depleted silicon-on-insulator (SOI) devices. A comparison of density gradient results with literature data is also presented

Keywords

MIS devices; MOS capacitors; MOSFET; capacitance; gradient methods; quantum theory; semiconductor device models; silicon-on-insulator; simulation; 2D simulations; MOS devices; SOI MOSFET; Si; capacitance; density gradient method; double single-gated SOI devices; fully-depleted SOI devices; macroscopic simulation; quantum mechanical effects; quantum mechanical modeling; semiconductor device modeling; single-gated SOI devices; two-dimensional simulations; Charge carrier processes; Computational modeling; Electron mobility; Gradient methods; MOS devices; Quantum computing; Quantum mechanics; Silicon on insulator technology; Statistics; Two dimensional displays;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.992871

Filename

992871