Schottky Barrier Height Modulation of Nickel–Dysprosium-Alloy Germanosilicide Contacts for Strained P-FinFETs

Author

Sinha, Mantavya ; Lee, Rinus Tek Po ; Chor, Eng Fong ; Yeo, Yee-Chia

Author_Institution

Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore

Volume

30

Issue

12

fYear

2009

Firstpage

1278

Lastpage

1280

Abstract

This letter reports on the fabrication and hole Schottky barrier (Phi_B ^P) modulation of a novel nickel (Ni)dysprosium (Dy)-alloy germanosilicide (NiDySiGe) on silicon-germanium (SiGe). Aluminum (Al) implant is utilized to lower the Phi_B ^P of NiDySiGe from ~0.5 to ~0.12 eV, with a correspondingly increasing Al dose in the range of 0-2 times 10¹⁵ atoms/cm². When integrated as the contact silicide in p-FinFETs (with SiGe source/drain), NiDySiGe with an Al implant dose of 2 times 10¹⁴ atoms/cm² leads to 32% enhancement in Jdsat over p-FinFETs with conventional NiSiGe contacts. Ni-Dy-alloy silicide is a promising single silicide solution for series-resistance reduction in CMOS FinFETs.

Keywords

Ge-Si alloys; MOSFET; Schottky barriers; aluminium; contact resistance; ion implantation; nickel compounds; Al; NiDySiGe; Schottky barrier height modulation; contact resistance; implant dose; p-FinFET; series-resistance reduction; Aluminum implant; FinFETs; Schottky barrier height; contact resistance; nickel (Ni)–dysprosium (Dy)-alloy germanosilicide (NiDySiGe);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2009.2034111

Filename

5313891