DocumentCode
1268147
Title
High responsitivity near infrared Ge photodetectors integrated on Si
Author
Masini, G. ; Colace, L. ; Assanto, G. ; Luan, H.C. ; Wada, K. ; Kimerling, L.C.
Author_Institution
Dept. of Electron. Eng., Terza Univ., Rome, Italy
Volume
35
Issue
17
fYear
1999
fDate
8/19/1999 12:00:00 AM
Firstpage
1467
Lastpage
1468
Abstract
The authors have fabricated and tested heterojunction Ge/Si photodetectors based on pure Ge epitaxially grown on Si (001) using a two-step UHV-CVD process followed by cyclic thermal annealing. The detectors exhibit responsivities as high as 550 mA/W at 1.32 μm and 250 mA/W at 1.55 μm and response times shorter than 850 ps
Keywords
annealing; infrared detectors; integrated optoelectronics; semiconductor epitaxial layers; semiconductor growth; semiconductor heterojunctions; vapour phase epitaxial growth; 1.32 micrometre; 1.55 micrometre; 850 ps; Ge-Si; cyclic thermal annealing; heterojunction photodetectors; infrared photodetectors; response times; responsitivity; two-step UHV-CVD process;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19991010
Filename
803618
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