• DocumentCode
    1268933
  • Title

    Modelling DC characteristics of GaAs MESFET devices using a simple and accurate analytic tool

  • Author

    Ibrahim, S.A. ; El-Rabaie, Sayed

  • Author_Institution
    Fac. of Electron. Eng., Menofia Univ., Egypt
  • Volume
    26
  • Issue
    22
  • fYear
    1990
  • Firstpage
    1892
  • Lastpage
    1893
  • Abstract
    A simple equation that relates the drain current to the gate and source voltages of GaAs MESFET devices is presented. The proposed equation covers the entire Ids/Vds characteristics with no limitations. The parameters of the equation are evaluated easily using simple analytic tools without optimisation. Results show that the proposed formula gives accurate fitting results compared with the most popular used formula (the Curtice equation). Typical CPU times for evaluating the modelling parameters for a NEC71000 device using the two models are in the ratio of 1:50.
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; electronic engineering computing; gallium arsenide; semiconductor device models; CPU times; Curtice equation; DC characteristics; GaAs; I/V characteristics; MESFET devices; NEC71000 device; analytic tool; drain current; gate voltage; modelling parameters; optimisation; source voltages;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19901218
  • Filename
    59487
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1268933