DocumentCode
126896
Title
A review on SOI MOSFET and kink reduction using selective back oxide structure
Author
Thakral, Binny ; Bakshi, Garima ; Kushwaha, Alok K. ; Manica
Author_Institution
SET, Ansal Univ., Gurgaon, India
fYear
2014
fDate
6-8 Feb. 2014
Firstpage
487
Lastpage
490
Abstract
Classical Scaling is no longer possible to follow Moore´s law. Planar Fully depleted SOI is an advanced technology designed to operate at low power. This paper deals with further scaling of SOI devices, its advantages and reduction of kink effect in SOI MOSFET using SELBOX Structure. Silvaco TCAD tools have been used, basic mechanism which lead to kink generation are studied in comparison with bulk MOSFET and advantages of SELBOX structures are described for various gap widths.
Keywords
MOSFET; silicon-on-insulator; technology CAD (electronics); Moore law; SELBOX structure; Silvaco TCAD tools; bulk MOSFET; gap widths; kink effect reduction; planar fully depleted SOl; selective back oxide structure; Graphics processing units; Heating; Lead; Logic gates; MOSFET; Optimization; System-on-chip; CoO; Kink Effect; Partially Depleted SOI MOSFET; Planar Fully Depleted SOI MOSFET; SELBOX (Selective Buried Oxide); SOC; SOI;
fLanguage
English
Publisher
ieee
Conference_Titel
Optimization, Reliabilty, and Information Technology (ICROIT), 2014 International Conference on
Conference_Location
Faridabad
Print_ISBN
978-1-4799-3958-9
Type
conf
DOI
10.1109/ICROIT.2014.6798372
Filename
6798372
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