DocumentCode
1269270
Title
Carrier lifetime increase in silicon by gettering with a MeV-implanted carbon-rich layer
Author
Skorupa, Wolfgang ; Kogler, R. ; Schmalz, K.
Author_Institution
Central Inst. for Nucl. Res., Dresden, East Germany
Volume
26
Issue
22
fYear
1990
Firstpage
1898
Lastpage
1899
Abstract
The gettering efficiency of silicon implanted with carbon ions in the energy range 0.33-10 MeV was tested by carrier lifetime measurements. After an intentional contamination of the sample back side with gold as a lifetime killer, the authors found values for the generation lifetime of the minority carriers on the front side higher by 1-2 orders of magnitude as compared with unimplanted silicon.
Keywords
carbon; carrier lifetime; elemental semiconductors; getters; ion implantation; minority carriers; silicon; 0.33 to 10 MeV; Au lifetime killer; MeV-implanted carbon-rich layer; Si:C; carrier lifetime measurements; gettering efficiency; intentional contamination; minority carriers; sample back side; semiconductors;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19901222
Filename
59491
Link To Document