Integrated Hydrogen-Sensing Amplifier With GaAs Schottky-Type Diode and InGaP–GaAs Heterojunction Bipolar Transistor

Author

Chiu, Shao-Yen ; Tsai, Jung-Hui ; Huang, Hsuan-Wei ; Liang, Kun-Chieh ; Tsai, Tzung-Min ; Hsu, Kuo-Yen ; Lour, Wen-Shung

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Ocean Univ., Keelung, Taiwan

Volume

30

Issue

9

fYear

2009

Firstpage

898

Lastpage

900

Abstract

New hydrogen-sensing amplifiers are fabricated by integrating a GaAs Schottky-type hydrogen sensor and an InGaP-GaAs heterojunction bipolar transistor. Sensing collector currents (I_CN and I_CH) reflecting to N₂ and hydrogen-containing gases are employed as output signals in common-emitter characteristics. Gummel-plot sensing characteristics with testing gases as inputs show a high sensing-collector-current gain (I_CH/I_CN) of > 3000. When operating in standby mode for in situ long-term detection, power consumption is smaller than 0.4 ??W. Furthermore, the room-temperature response time is 85 s for the integrated hydrogen-sensing amplifier fabricated with a bipolar-type structure.

Keywords

III-V semiconductors; Schottky diodes; amplifiers; gallium arsenide; heterojunction bipolar transistors; indium compounds; sensors; wide band gap semiconductors; InGaP-GaAs; Schottky-type diode; Schottky-type hydrogen sensor; bipolar-type structure; common-emitter characteristic; gummel-plot sensing characteristic; heterojunction bipolar transistor; high sensing-collector-current gain; integrated hydrogen-sensing amplifier; power consumption; room temperature response time; sensing collector current; time 85 s; Bipolar; InGaP–GaAs; Schottky diode; heterojunction; hydrogen sensor;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2009.2025894

Filename

5184885