Investigation for Resistive Switching by Controlling Overflow Current in Resistance Change Nonvolatile Memory

Author

Ahn, Seung-Eon ; Lee, Myoung-Jae ; Kang, Bo Soo ; Lee, Dongsoo ; Kim, Chang-Jung ; Kim, Dong-Sik ; Chung, U-In

Author_Institution

Samsung Adv. Inst. of Technol., Yongin, South Korea

Volume

11

Issue

6

fYear

2012

Firstpage

1122

Lastpage

1125

Abstract

In recent years, resistance changes random access memory (RRAM) which shows reversible bistable resistance states by applied voltage has been studied as one of the alternatives of next-generation nonvolatile memory due to its excellent device characteristics including scalability, speed, and retention. Here, we report on the noncharge-based NiO RRAM device characteristics with load resistor as well as the simulation results of controlled conducting filament configuration. The RRAM device with load resistor showed super performances including highly reduction of switching current (~1 order) and significantly improved switching voltage distribution (30% reduction).

Keywords

electrical conductivity transitions; electrical resistivity; nickel compounds; random-access storage; NiO; applied voltage; controlled conducting filament configuration; load resistor; noncharge-based NiO resistance change random access memory device characteristics; overflow current; resistance change nonvolatile memory; resistive switching; reversible bistable resistance states; switching current; switching voltage distribution; Circuit breakers; Integrated circuit modeling; Resistance; Resistors; Switches; Switching circuits; Voltage measurement; Nickel oxide; nonvolatile memory; resistance switching;

fLanguage

English

Journal_Title

Nanotechnology, IEEE Transactions on

Publisher

ieee

ISSN

1536-125X

Type

jour

DOI

10.1109/TNANO.2012.2214788

Filename

6279486