40 Gb/s All-Silicon Photodetector Based on Microring Resonators

Author

Xianyao Li ; Zhiyong Li ; Xi Xiao ; Hao Xu ; Jinzhong Yu ; Yude Yu

Author_Institution

State Key Lab. on Integrated Optoelectron., Inst. of Semiconductorsm, Beijing, China

Volume

27

Issue

7

fYear

2015

fDate

April1, 1 2015

Firstpage

729

Lastpage

732

Abstract

We experimentally demonstrate the first all-silicon microring photodetector with 40-Gb/s operation speed based on the defect-assisted subbandgap avalanche mechanism in reverse p-n junction. A novel zigzag p-n junction providing a high responsivity of 48 mA/W upon 8 V in avalanche mode is demonstrated with a low doping concentration of 2 × 10¹⁷ cm^-3 . With the optimized operation wavelength, a 3-dB optical to electrical response of ~20 GHz and high-speed photodetections of 20-40 Gb/s are achieved experimentally, showing great potential in the application of all-silicon ultrahigh-capacity optical interconnects.

Keywords

doping profiles; elemental semiconductors; micro-optomechanical devices; micromechanical resonators; microsensors; optical resonators; p-n junctions; photodetectors; silicon; Si; all-silicon microring photodetector; all-silicon ultrahigh-capacity optical interconnects; avalanche mode; bit rate 40 Gbit/s; defect-assisted subbandgap avalanche mechanism; doping concentration; electrical response; microring resonators; optical response; reverse p-n junction; zigzag p-n junction; Junctions; Optical waveguides; Optimized production technology; Photoconductivity; Photodetectors; Silicon; Voltage measurement; All-silicon photodetection; high speed; microring resonator;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2015.2390619

Filename

7006639