DocumentCode
1270966
Title
Theoretical evaluation of a novel design for digital GaAs ICs
Author
Passlack, Matthias ; Elschner, Horst ; Stenzel, Roland
Author_Institution
Dresden Univ. of Technol., East Germany
Volume
23
Issue
5
fYear
1988
fDate
10/1/1988 12:00:00 AM
Firstpage
1249
Lastpage
1256
Abstract
The performance of a novel integrated logic (complementary level FET logic, CLFL) for digital GaAs ICs was investigated by circuit simulation. This novel circuit design is characterized by complementary levels and DFETs with very small negative V TD values (V TD⩾-100 mV). The static power dissipation, the dynamic power dissipation, the propagation delay time, the dynamic logic swing, the noise margins, and the driving capability were calculated and compared with the corresponding quantities of the conventional E/D technology (DCFL). CLFL circuits are about 5-500 times less static-power-consuming than DCFL circuits at the same switching speed. Inverters with a propagation delay time of 20-100 ps have shown a minimum power-delay product of 0.1 fJ. Disadvantages are a higher number of devices (a factor of 1.2-2.1) and more extensive interconnections
Keywords
III-V semiconductors; digital integrated circuits; digital simulation; field effect integrated circuits; gallium arsenide; integrated circuit technology; 0.1 fJ; 100 mV; 20 to 100 ps; CLFL circuits; DCFL; DFETs; GaAs; circuit simulation; complementary level FET logic; complementary levels; conventional E/D technology; digital GaAs ICs; driving capability; dynamic logic swing; dynamic power dissipation; noise margins; power-delay product; propagation delay time; semiconductors; static power dissipation; Circuit noise; Circuit simulation; Circuit synthesis; FETs; Gallium arsenide; Inverters; Logic circuits; Power dissipation; Propagation delay; Switching circuits;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/4.5952
Filename
5952
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