Modeling manufacturing yield and reliability

Author

Kim, Taeho ; Kuo, Way

Author_Institution

Korea Telecom, Taejon, South Korea

Volume

12

Issue

4

fYear

1999

fDate

11/1/1999 12:00:00 AM

Firstpage

485

Lastpage

492

Abstract

In this paper, we introduce the concept of reliability defect, present the time-dependent defect growth model during operations based on a defect-related gate oxide breakdown mechanism, and build the yield-reliability relation model. Discussions presented here can also be applicable to other device failures when different physics-of-failure mechanisms are found. Through the relation model, it is possible to find a minimum level of latent defect screening to assure the required level of reliability and predict reliability for new products when it is combined with a yield prediction model

Keywords

failure analysis; integrated circuit modelling; integrated circuit reliability; integrated circuit yield; semiconductor device breakdown; semiconductor process modelling; defect-related gate oxide breakdown mechanism; device failures; latent defect screening; manufacturing yield; physics-of-failure mechanisms; reliability; reliability defect; time-dependent defect growth model; yield prediction model; yield-reliability relation model; Electric breakdown; Helium; Integrated circuit yield; Manufacturing processes; Predictive models; Probability; Semiconductor device manufacture; Semiconductor device reliability; Testing; Virtual manufacturing;

fLanguage

English

Journal_Title

Semiconductor Manufacturing, IEEE Transactions on

Publisher

ieee

ISSN

0894-6507

Type

jour

DOI

10.1109/66.806126

Filename

806126