Surface-Charge-Collection-Enhanced High-Sensitivity High-Stability Silicon Photodiodes for DUV and VUV Spectral Ranges

Author

Shi, L. ; Nihtianov, S. ; Haspeslagh, L. ; Scholze, F. ; Gottwald, A. ; Nanver, L.K.

Author_Institution

Delft Univ. of Technol., Delft, Netherlands

Volume

59

Issue

11

fYear

2012

Firstpage

2888

Lastpage

2894

Abstract

The electrical and optical performance of silicon pure-boron (Pure-B) diode is investigated in relationship to the thermal processing used after formation of the PureB chemical-vapor-deposition layer that creates otherwise extremely ultrashallow p⁺-n junctions. The measured responsivity of PureB diodes is high and stable in the deep ultraviolet (UV) and vacuum UV spectral ranges, covering the spectrum from 220 down to 50 nm. Results are presented, showing that a very high surface charge collection efficiency can be obtained owing to a strong surface electric field resulting from a doping profile that is steep and without roll-off right up to the Si surface.

Keywords

boron; chemical vapour deposition; doping profiles; elemental semiconductors; photodiodes; silicon; DUV spectral range; Si; Si:B; VUV spectral range; chemical vapor deposition layer; deep ultraviolet spectral range; doping profile; high-sensitivity high-stability silicon photodiodes; high-surface charge collection efficiency; silicon pure-boron diode responsivity; silicon surface; surface charge collection-enhanced photodiodes; surface electric field; thermal processing; vacuum UV spectral range; wavelength 220 nm to 50 nm; Boron; Optical surface waves; Photodiodes; Silicon; Surface treatment; Ultraviolet sources; Deep ultraviolet (UV) (DUV); degradation; responsivity; silicon photodiode; ultrashallow junction; vacuum UV (VUV);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2012.2210225

Filename

6280660