Narrow-linewidth 1.3 μm DFB-DCPBH lasers with λ/4-shifted first-order gratings fabricated by electron beam lithography using a new fast resist

Author

Zah, C.E. ; Caneau, Catherine ; Menocal, S.G. ; Lin, P.S.D. ; Favire, F. ; Lee, T.P.

Author_Institution

Bell Commun. Res. Inc., Red Bank, NJ

Volume

24

Issue

2

fYear

1988

fDate

1/21/1988 12:00:00 AM

Firstpage

94

Lastpage

96

Abstract

GaInAsP-InP 1.3 μm DFB-DCPBH lasers were made with λ/4-shifted first-order gratings fabricated by electron beam lithography using a new fast resist, poly(3-butenyl-trimethylsilane sulfone). The devices had a threshold current of 17 mA, a submode suppression ratio of 39 dB, and a minimum linewidth of 4.4 MHz at 15 mW. By heterodyning two DFB lasers, the authors obtained a beat frequency of 1.5 GHz with 12 MHz FWHM

Keywords

III-V semiconductors; diffraction gratings; distributed feedback lasers; electron beam lithography; gallium arsenide; gallium compounds; indium compounds; integrated optics; laser transitions; optical communication equipment; optical workshop techniques; semiconductor junction lasers; spectral line breadth; λ/4-shifted first-order gratings; 1.3 micron; 1.5 GHz; 15 mW; 17 mA; 4.4 MHz; DFB-DCPBH lasers; GaInAsP-InP; III-V semiconductors; beat frequency; distributed feedback laser; double channel; electron beam lithography; fabrication; fast resist; heterodyning; integrated optics; narrow linewidth; optical communication equipment; planar buried heterostructure; poly(3-butenyl-trimethylsilane sulfone); semiconductor laser;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

Filename

5528