A scalable high-frequency noise model for bipolar transistors with application to optimal transistor sizing for low-noise amplifier design

Author

Voinigescu, Sorin P. ; Maliepaard, Michael C. ; Showell, Jonathan L. ; Babcock, Greg E. ; Marchesan, David ; Schroter, Michael ; Schvan, Peter ; Harame, David L.

Author_Institution

Nortel Technol., Northern Telecom Canada Ltd., Ottawa, Ont., Canada

Volume

32

Issue

9

fYear

1997

fDate

9/1/1997 12:00:00 AM

Firstpage

1430

Lastpage

1439

Abstract

Fully scalable, analytical HF noise parameter equations for bipolar transistors are presented and experimentally tested on high-speed Si and SiGe technologies. A technique for extracting the complete set of transistor noise parameters from Y parameter measurements only is developed and verified. Finally, the noise equations are coupled with scalable variants of the HICUM and SPICE-Gummel-Poon models and are employed in the design of tuned low noise amplifiers (LNA´s) in the 1.9-, 2.4-,and 5.8-GHz bands

Keywords

Ge-Si alloys; SPICE; UHF amplifiers; UHF bipolar transistors; UHF measurement; circuit tuning; elemental semiconductors; microwave amplifiers; microwave bipolar transistors; microwave measurement; semiconductor device models; semiconductor device noise; semiconductor materials; silicon; 1.9 GHz; 2.4 GHz; 5.8 GHz; HICUM; SPICE-Gummel-Poon models; Si; SiGe; Y parameter measurements; bipolar transistors; low-noise amplifier design; noise parameter equations; optimal transistor sizing; scalable high-frequency noise model; tuned low noise amplifiers; Background noise; Bipolar transistors; Circuit noise; Equations; Integrated circuit noise; Low-noise amplifiers; Noise figure; Noise measurement; Semiconductor device noise; Silicon germanium;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.628757

Filename

628757