Degradation of High-Frequency Noise in nMOSFETs Under Different Modes of Hot-Carrier Stress

Author

Su, Hao ; Wang, Hong ; Liao, Hong ; Hu, Hang

Author_Institution

Dept. of Process Integration, United Microelectron. Corp., Singapore, Singapore

Volume

59

Issue

11

fYear

2012

Firstpage

3078

Lastpage

3083

Abstract

In this paper, high-frequency noise under different hot-carrier (HC) stress modes in nMOSFETs has been characterized and analyzed. The experimental results revealed a significant larger increase in NF_min and Rn under maximum substrate current IB, max stress or hot hole injection H_inj than hot electron injection E_inj. It is suggested that the difference in high-frequency noise after stress strongly depends on the type of defects generated during HC stresses. Our results provide experimental verification that the shallow interface states/traps at the Si/SiO₂ interface introduced by HC stress play an important role in the degradation of high-frequency channel noise.

Keywords

MOSFET; hot carriers; interface states; semiconductor device noise; silicon compounds; Si-SiO₂; high-frequency channel noise; hot electron injection; hot hole injection; hot-carrier stress; interface states; interface traps; nMOSFET; substrate current; Charge carrier processes; Degradation; Hot carriers; MOSFETs; Noise measurement; Radio frequency; Stress; Channel noise; RF metal–oxide–semiconductor field-effect transistors (MOSFETs); hot carrier (HC); semiconductor device noise;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2012.2212022

Filename

6287574