A 74-GHz bandwidth InAlAs/InGaAs-InP HBT distributed amplifier with 13-dB gain

Author

Baeyens, Y. ; Pullela, R. ; Mattia, J.P. ; Tsai, Huan-Shang ; Chen, Y.-K.

Author_Institution

Bell Labs., Lucent Technol., Murray Hill, NJ, USA

Volume

9

Issue

11

fYear

1999

Firstpage

461

Lastpage

463

Abstract

To date, distributed amplifiers based on heterojunction bipolar transistors (HBTs) have consistently shown lower gain-bandwidth products than their high electron mobility transistor (HEMT) counterparts. By using improved design techniques, we report a single-stage distributed amplifier with 13-dB gain and 74 GHz 3-dB bandwidth, based on InAlAs/InGaAs-InP HBTs with 160-GHz fT and 140-GHz f_max. The high gain and bandwidth results in a gain-bandwidth product of 330 GHz, which is, to our knowledge, the highest reported for HBT-based amplifiers and rivals that of the best InP HEMT distributed amplifiers with e-beam written gate of 0.1-0.15 μm dimension.

Keywords

III-V semiconductors; aluminium compounds; bipolar MIMIC; distributed amplifiers; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated circuit design; millimetre wave amplifiers; wideband amplifiers; 13 dB; 140 GHz; 160 GHz; 74 GHz; HBT distributed amplifier; InAlAs-InGaAs-InP; design techniques; gain-bandwidth products; heterojunction bipolar transistors; single-stage amplifier; Attenuation; Bandwidth; Broadband amplifiers; Capacitance; Distributed amplifiers; HEMTs; Heterojunction bipolar transistors; Indium compounds; Indium phosphide; Optical amplifiers;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.808036

Filename

808036