Degradation behavior of 850-nm vertical-cavity surface-emitting lasers with an air-post index-guide structure

Author

Takeshita, Tatsuya ; Kagawa, Toshiaki ; Tateno, Kouta ; Tadanaga, Osamu ; Tohmori, Yuichi ; Amano, Chikara

Author_Institution

NTT Photonics Labs., NTT Corp.Kanagawa, Kanagawa, Japan

Volume

20

Issue

4

fYear

2002

fDate

4/1/2002 12:00:00 AM

Firstpage

722

Lastpage

729

Abstract

The degradation mechanism of a vertical-cavity surface-emitting laser (VCSEL) with an air-post structure is analyzed for stable optical parallel interconnection communication. It is clarified that the degradation is caused by the behavior of latent defects in the GaAs active layer. Decreasing the defects in the active region as well as decreasing the threshold current is important for obtaining a long-lifetime VCSEL

Keywords

cathodoluminescence; electroluminescence; laser reliability; laser transitions; life testing; optical interconnections; quantum well lasers; semiconductor laser arrays; surface emitting lasers; waveguide lasers; 850 nm; Al_0.15Ga_0.85As-Al_0.95Ga_0.05As; GaAs; GaAs active layer; VCSEL; air-post index-guide structure; degradation behavior; latent defects; long-lifetime VCSEL; stable optical parallel interconnection communication; threshold current; vertical-cavity surface-emitting lasers; Degradation; Fiber lasers; Gallium arsenide; Optical surface waves; Optical waveguides; Oxidation; Semiconductor lasers; Surface emitting lasers; Thermal resistance; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/50.996596

Filename

996596