• DocumentCode
    1276234
  • Title

    Polarized Emission From InGaN Light-Emitting Diodes With Self-Assembled Nanosphere Coatings

  • Author

    Zhang, Qian ; Li, Kwai Hei ; Choi, Hoi Wai

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Univ. of Hong Kong, Hong Kong, China
  • Volume
    24
  • Issue
    18
  • fYear
    2012
  • Firstpage
    1642
  • Lastpage
    1645
  • Abstract
    The polarization behavior of light emission from InGaN light-emitting diodes (LEDs) with nanosphere opal coatings has been studied. The close-packed nanosphere opal films are self-assembled with 220-nm polystyrene nanospheres onto the LEDs. The optical transmission properties of transverse electric and transverse magnetic polarized light have been measured as a function of detection angle; an integrated p/s ratio of 2.2 has been obtained at a detection angle of 70°. The polarization of light propagating through the opal film is strongly related to the photonic bandgap of the 3-D photonic crystal and is also dependent upon the angle of incidence. Theoretical calculations by the transfer matrix method are found to be consistent with the measured results.
  • Keywords
    III-V semiconductors; indium compounds; light emitting diodes; optical films; photonic band gap; self-assembly; wide band gap semiconductors; InGaN; LED; light emitting diodes; light propagating polarization; nanosphere opal coating; optical transmission; photonic bandgap; polarized emission; self-assembled nanosphere coatings; size 220 nm; transfer matrix method; Coatings; Lattices; Light emitting diodes; Optical polarization; Photonic crystals; Self-assembly; Wavelength measurement; Light-emitting diodes (LEDs); nanosphere; polarization;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/LPT.2012.2211586
  • Filename
    6290386