DocumentCode
1276431
Title
Fully integrated 2.2-mW CMOS front end for a 900-MHz wireless receiver
Author
Mahdavi, Shahram ; Abidi, Asad A.
Author_Institution
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
Volume
37
Issue
5
fYear
2002
fDate
5/1/2002 12:00:00 AM
Firstpage
662
Lastpage
669
Abstract
Low power consumption is the most important concern for integrated wireless devices. This paper illustrates low-power design principles in the CMOS context. They entail seeking strategic combinations of high-quality off-chip passives with RF integrated circuits and searching for better architectures in wireless receivers to low power. The principles are illustrated with a fully integrated 2.2-mW 1.2-V front end for 900-MHz receiver, fabricated in 0.35-μm CMOS
Keywords
CMOS integrated circuits; UHF integrated circuits; low-power electronics; radio receivers; 0.35 micron; 1.2 V; 2.2 mW; 900 MHz; RF integrated circuit; fully-integrated CMOS front-end; low power design; wireless receiver; 1f noise; Baseband; Circuit noise; Energy consumption; Filtering theory; Filters; Frequency shift keying; Low-noise amplifiers; Radio frequency; Spread spectrum communication;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/4.997862
Filename
997862
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