• DocumentCode
    1277604
  • Title

    Strongly buckled square micromachined membranes

  • Author

    Ziebart, Volker ; Paul, Oliver ; Baltes, Henry

  • Author_Institution
    Phys. Electron. Lab., Eidgenossische Tech. Hochschule, Zurich, Switzerland
  • Volume
    8
  • Issue
    4
  • fYear
    1999
  • fDate
    12/1/1999 12:00:00 AM
  • Firstpage
    423
  • Lastpage
    432
  • Abstract
    The buckling of compressively prestressed square membranes with built-in edges is investigated experimentally and analyzed theoretically. The buckling depends weakly on Poisson´s ratio and essentially is a function of the reduced prestrain, ε¯0 0a2/h2, where ε0 is the physical prestrain, a is the width, and h is the thickness of the membrane. As ε¯0 becomes increasingly negative, the membrane undergoes two symmetry breaking buckling transitions. Beyond the first transition occurring at ε¯cr1, the buckling profile has all the reflection and rotation symmetries of a square. The reflection symmetries are lost through a second instability transition at ε¯cr2. The bifurcation points, ε¯cr1 and ε¯cr2, and buckling profiles were calculated using analytical energy minimization and nonlinear finite-element simulation. Both methods agree. The buckling of micromachined plasma-enhanced chemical vapor deposition silicon nitride membranes on a silicon wafer is interpreted in terms of the theoretical results. Good matching between measured and calculated buckling profiles is found. The extracted strain values are consistent irrespective of the size and buckling mode of the membranes. From the average strain across the wafer ε0=-3.50×10-4 and complementary wafer curvature measurements, a Young´s modulus of 130 GPa is deduced. Methods for the straightforward extraction of ε0 from experimental center deflections of buckled square membranes are described
  • Keywords
    Poisson ratio; Young´s modulus; bifurcation; buckling; finite element analysis; membranes; micromachining; plasma CVD coatings; spontaneous symmetry breaking; Poisson ratio; Si; SiN; Young modulus; bifurcation; buckling transition; energy minimization; micromachined PECVD silicon nitride thin film; nonlinear finite element simulation; silicon wafer curvature; square membrane; strain; symmetry breaking; Analytical models; Bifurcation; Biomembranes; Finite element methods; Plasma chemistry; Plasma measurements; Plasma simulation; Reflection; Silicon; Strain measurement;
  • fLanguage
    English
  • Journal_Title
    Microelectromechanical Systems, Journal of
  • Publisher
    ieee
  • ISSN
    1057-7157
  • Type

    jour

  • DOI
    10.1109/84.809057
  • Filename
    809057