DocumentCode
1277949
Title
fmax of 490 GHz metamorphic In0.52Al0.48 As/In0.53Ga0.47As HEMTs on GaAs substrate
Author
Bollaert, S. ; Cordier, Y. ; Zaknoune, M. ; Parenty, T. ; Happy, H. ; Lepilliet, S. ; Cappy, A.
Author_Institution
Departement Hyper-frequences et Semiconducteurs, Inst. d´´Electronique et de Micro-electronique du Nord, Villeneuve d´´Ascq, France
Volume
38
Issue
8
fYear
2002
fDate
4/11/2002 12:00:00 AM
Firstpage
389
Lastpage
391
Abstract
Metamorphic In0.52Al0.48As/In0.53Ga0.47 As HEMTs on GaAs substrate with 60 nm gate length have been fabricated. Drain-to-source current Ids of 600 mA/mm and extrinsic transconductance of 850 mS/mm were obtained with these devices. The cutoff frequency fT of extrinsic current gain |h 21|2 and maximum oscillation frequency fmax deduced from Mason´s unilateral gain are 260 GHz and 490 GHz respectively. To the authors´ knowledge, this frequency performance is the highest ever reported for HEMTs on GaAs substrate
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; 260 GHz; 490 GHz; 60 nm; GaAs; GaAs substrate; In0.52Al0.48As-In0.53Ga0.47 As; In0.52Al0.48As/In0.53Ga0.47 As metamorphic HEMT; Mason unilateral gain; cutoff frequency; drain-to-source current; extrinsic current gain; extrinsic transconductance; maximum oscillation frequency;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20020269
Filename
998344
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