DocumentCode
1278286
Title
Magnetoresistive read/write channel models
Author
Lin, Bin ; Hild, Kenneth E. ; Cruz, J.R.
Author_Institution
Philips Semicond., Sunnyvale, CA, USA
Volume
35
Issue
6
fYear
1999
fDate
11/1/1999 12:00:00 AM
Firstpage
4528
Lastpage
4531
Abstract
We studied the magnetic read/write channel with a magnetoresistive (MR) read head at a normalized channel density range of 2.5-3.0, observing and modeling partial erasure and nonlinear transition shift. The asymmetry of the MR head had a significant effect on the channel. We applied the transition-width-reduction model, the partial-erasure-plus-transition-shift model, and the Volterra model to the MR read/write channel, and evaluated the accuracy of these models on the basis of parameters obtained from experimental data. In order to consider the asymmetry of the MR head, we introduced a nonlinear MR head model into the read/write channel. These modified models achieved higher accuracy. Of all the models considered, the Volterra model provides the largest improvement over the linear model
Keywords
Volterra equations; magnetic heads; magnetic recording; magnetoresistive devices; modelling; MR read head; Volterra model; head asymmetry; magnetic read/write channel; magnetoresistive read head; nonlinear MR head model; nonlinear transition shift; partial erasure; partial-erasure-plus-transition-shift model; read/write channel models; transition-width-reduction model; Disk recording; Hard disks; Laboratories; Magnetic heads; Magnetic noise; Magnetic recording; Magnetoresistance; Neural engineering; Nonlinear distortion; Semiconductor device noise;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/20.809146
Filename
809146
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