• DocumentCode
    1278286
  • Title

    Magnetoresistive read/write channel models

  • Author

    Lin, Bin ; Hild, Kenneth E. ; Cruz, J.R.

  • Author_Institution
    Philips Semicond., Sunnyvale, CA, USA
  • Volume
    35
  • Issue
    6
  • fYear
    1999
  • fDate
    11/1/1999 12:00:00 AM
  • Firstpage
    4528
  • Lastpage
    4531
  • Abstract
    We studied the magnetic read/write channel with a magnetoresistive (MR) read head at a normalized channel density range of 2.5-3.0, observing and modeling partial erasure and nonlinear transition shift. The asymmetry of the MR head had a significant effect on the channel. We applied the transition-width-reduction model, the partial-erasure-plus-transition-shift model, and the Volterra model to the MR read/write channel, and evaluated the accuracy of these models on the basis of parameters obtained from experimental data. In order to consider the asymmetry of the MR head, we introduced a nonlinear MR head model into the read/write channel. These modified models achieved higher accuracy. Of all the models considered, the Volterra model provides the largest improvement over the linear model
  • Keywords
    Volterra equations; magnetic heads; magnetic recording; magnetoresistive devices; modelling; MR read head; Volterra model; head asymmetry; magnetic read/write channel; magnetoresistive read head; nonlinear MR head model; nonlinear transition shift; partial erasure; partial-erasure-plus-transition-shift model; read/write channel models; transition-width-reduction model; Disk recording; Hard disks; Laboratories; Magnetic heads; Magnetic noise; Magnetic recording; Magnetoresistance; Neural engineering; Nonlinear distortion; Semiconductor device noise;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/20.809146
  • Filename
    809146