DocumentCode
1278298
Title
Experimental verification of the dependence of bipolar transistor flicker noise on power dissipation
Author
Forbes, L. ; Zhang, C.W. ; Zhang, B.L.
Author_Institution
Dept. of Electr. & Comput. Eng., Oregon State Univ., Corvallis, OR, USA
Volume
49
Issue
5
fYear
2002
fDate
5/1/2002 12:00:00 AM
Firstpage
945
Lastpage
947
Abstract
Low-frequency 1/f or flicker noise in the frequency range of Hz to kHz has been identified and demonstrated to be described by temperature fluctuations in heat conduction in bipolar transistors operated at higher power densities. The noise power spectral density has been shown to depend upon the increase in device temperature above the ambient temperature
Keywords
1/f noise; bipolar transistors; flicker noise; heat conduction; semiconductor device noise; 1/f noise; bipolar transistor; flicker noise; heat conduction; low-frequency noise; noise power spectral density; power dissipation; temperature fluctuations; 1f noise; Bipolar transistors; Equivalent circuits; Fluctuations; Frequency; Heat sinks; Low-frequency noise; Phase noise; Power dissipation; Temperature;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.998609
Filename
998609
Link To Document