DocumentCode
1278608
Title
A Novel Design and Modeling Paradigm for Memristor-Based Crossbar Circuits
Author
Vourkas, Ioannis ; Sirakoulis, Georgios Ch
Author_Institution
Dept. of Electr. & Comput. Eng., Democritus Univ. of Thrace, Xanthi, Greece
Volume
11
Issue
6
fYear
2012
Firstpage
1151
Lastpage
1159
Abstract
Over 30 years ago L. Chua proposed the existence of a new class of passive circuit elements, which he called memristors and memristive devices. The unique electrical characteristics associated with them, along with the advantages of crossbar structures, have the potential to revolutionize computing architectures. A well-defined and effective memristor model for circuit design combined with a design paradigm based on well-understood underlying logic design principles would certainly accelerate research on nanoscale circuits and systems. Toward this goal, we propose a memristor crossbar circuit design paradigm in which memristors are modeled using the quantum mechanical phenomenon of tunneling. We use this circuit model to design and simulate various logic circuit designs capable of universal computation. Finally, we develop and present a new design paradigm for memristor-based crossbar circuits.
Keywords
integrated circuit design; integrated circuit modelling; integrated logic circuits; memristors; nanoelectronics; passive networks; circuit model; computing architectures; crossbar structures; electrical characteristics; logic circuit designs; memristive devices; memristor-based crossbar circuits; nanoscale circuits; passive circuit elements; quantum mechanical phenomenon; tunneling; CMOS integrated circuits; Integrated circuit modeling; Mathematical model; Memristors; Resistance; Switches; Tunneling; Crossbar; digital logic design; memristor; quantum tunneling;
fLanguage
English
Journal_Title
Nanotechnology, IEEE Transactions on
Publisher
ieee
ISSN
1536-125X
Type
jour
DOI
10.1109/TNANO.2012.2217153
Filename
6294451
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