0.3-μm gate length p-channel AlGaAs/InGaAs heterostructure field effect transistors with high cut-off frequency

Author

Hara, N. ; Suehiro, H. ; Shima, M. ; Kuroda, S.

Author_Institution

Fujitsu Labs. Ltd., Atsugi, Japan

Volume

18

Issue

2

fYear

1997

Firstpage

63

Lastpage

65

Abstract

P-channel Heterostructure Field Effect Transistors (HFETs) with a 0.3-μm gate were fabricated by Mg ion implantation. The maximum transconductance was 68 mS/mm and there was no serious drain or gate leakage current, regardless of this short gate length. The gate turn on voltage (@I/sub gs/=-1 μA/μm) was -2.1 V and its absolute value was large enough for use in complementary HFETs. S-parameters measurements showed a very high cut-off frequency of over 10 GHz. Results indicated the superiority of less-diffusive Mg ion implantation for forming p/sup +/-layer in p-channel HFETs.

Keywords

III-V semiconductors; S-parameters; aluminium compounds; gallium arsenide; indium compounds; ion implantation; microwave field effect transistors; -2.1 V; 0.3 micron; 10 GHz; 68 mS/mm; AlGaAs:Mg-InGaAs; Mg ion implantation; S-parameters measurements; cutoff frequency; heterostructure FET; heterostructure field effect transistors; maximum transconductance; p-channel HFET; p/sup +/-layer formation; short gate length; Cutoff frequency; Frequency measurement; HEMTs; Indium gallium arsenide; Ion implantation; Leakage current; MODFETs; Scattering parameters; Transconductance; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.553045

Filename

553045