High-efficiency power amplifier integrated with antenna

Author

Radisic, Vesna ; Chew, Siou Teck ; Qian, Yongxi ; Itoh, Tatsuo

Author_Institution

Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA

Volume

7

Issue

2

fYear

1997

fDate

2/1/1997 12:00:00 AM

Firstpage

39

Lastpage

41

Abstract

Two class B GaAs field-effect transistor (FET) power amplifiers integrated with patch antennas have been designed and fabricated at 2.48 GHz. Both amplifiers are integrated with patch antennas, which serve as load and radiator. In one case, a standard patch design was used with random harmonic termination. In another case, a modified patch design was used, which allows the tuning of the second harmonic. In this case the antenna has an additional function of a filter. An increase of 7% in the power-added efficiency (PAE) and 0.5 dB in the output power was achieved through the second harmonic tuning

Keywords

III-V semiconductors; active antennas; gallium arsenide; microstrip antennas; microwave power amplifiers; 2.48 GHz; GaAs; class B GaAs field-effect transistor power amplifier; integration; patch antenna; power-added efficiency; random harmonic termination; second harmonic tuning; FETs; Frequency; High power amplifiers; Impedance measurement; Patch antennas; Power amplifiers; Power generation; Power harmonic filters; Resonance; Tuning;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.553052

Filename

553052