• DocumentCode
    1279277
  • Title

    High-frequency output characteristics of AlGaAs/GaAs heterojunction bipolar transistors

  • Author

    Chen, Jiann-Jong ; Gao, G.B. ; Unlu, M.S. ; Morkoc, H.

  • Author_Institution
    Coordinated Sci. Lab., Illinois Univ., Urbana, IL, USA
  • Volume
    26
  • Issue
    25
  • fYear
    1990
  • Firstpage
    2058
  • Lastpage
    2060
  • Abstract
    A model has been developed which generates the high-frequency ic-vce output characteristics of bipolar transistors from computed cutoff frequency against current density data. The presented results, which can be used directly for large-signal modelling are the first report of high-frequency output characteristics of bipolar transistors.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; semiconductor device models; AlGaAs-GaAs heterojunction bipolar transistors; current density; cutoff frequency; high frequency output characteristics; large-signal modelling; model;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19901328
  • Filename
    59596
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1279277