An early detection method of device burn-in failure caused by tungsten side-diffusion through seam in premetal dielectric film

A simple early detection method of defective devices before burn-in test has been discussed when the defect comes from tungsten side-diffusion through seams in premetal dielectric film. Tunneling current through thin remaining premetal dielectric film along seams caused by the tungsten side-diffusion has been measured and analyzed. Using the proposed early detection method, it becomes easy to compare seam formation in different premetal dielectric films and process parameters which affect seam formation.