A high-performance five-channel NMOSFET using selective epitaxial growth and lateral solid phase epitaxy

Author

Kumar, Mahender ; Liu, Haitao ; Sin, Johnny K O

Author_Institution

Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China

Volume

23

Issue

5

fYear

2002

fDate

5/1/2002 12:00:00 AM

Firstpage

261

Lastpage

263

Abstract

In this letter, a novel five-channel NMOSFET (FC-NMOS) using selective epitaxial growth (SEG) and lateral solid phase epitaxy (LSPE) is reported. The FC-NMOS is an integration of a conventional bulk NMOS, two vertical NMOS, and a gate-all-around NMOS. The top silicon layer for implementing the gate-all-around structure is obtained by using the LSPE with the SEG pillar as the silicon seed. The FC-NMOS has a 3.6/spl times/ higher current drive as compared to the conventional bulk NMOS. This makes the FC-NMOS very promising for VLSI/ULSI applications.

Keywords

MOSFET; isolation technology; semiconductor epitaxial layers; semiconductor growth; solid phase epitaxial growth; SEG pillar; Si; ULSI; VLSI; current drive; five-channel NMOSFET; gate-all-around NMOS; gate-all-around structure; lateral solid phase epitaxy; selective epitaxial growth; vertical NMOS; Epitaxial growth; Fabrication; Lithography; MOS devices; MOSFET circuits; Silicon compounds; Solids; Substrates; Ultra large scale integration; Very large scale integration;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.998870

Filename

998870