DocumentCode
1279474
Title
Tensile and compressive behaviour of silicon carbide nanocones with 120° disclination
Author
Yanling Tian ; Ribo Wei ; Weiguo Gao ; Eichhorn, Volkmar ; Fatikow, Sergej ; Dawei Zhang
Author_Institution
Sch. of Mech. Eng., Tianjin Univ., Tianjin, China
Volume
7
Issue
8
fYear
2012
fDate
8/1/2012 12:00:00 AM
Firstpage
798
Lastpage
801
Abstract
The tensile and compressive behaviour of silicon carbide nanocones (SiCNCs) under axial strain has been investigated using classic molecular dynamics simulations. For the tensile behaviour, the influences of the cone height on the failure strain, and failure force as well as failure strain energy have been systematically explored. Both the failure strain and the strain energy of SiCNCs are found to decrease with the increasing cone height. However, the failure force is marginally affected by the cone height. For the compressive behaviour of the SiCNCs, the deformation patterns in the buckling and postbuckling stages are extensively examined. The influences of the cone height on compressive behaviour have been explored. It is noted that the increased cone height has significant effect on the critical strain, and critical force as well as critical strain energy per atom of SiCNCs.
Keywords
buckling; molecular dynamics method; nanostructured materials; silicon compounds; wide band gap semiconductors; SiC; axial strain; compressive behaviour; cone height; critical force; critical strain energy; deformation patterns; disclination; failure force; failure strain energy; molecular dynamics simulations; postbuckling stage; silicon carbide nanocone atom; tensile behaviour;
fLanguage
English
Journal_Title
Micro & Nano Letters, IET
Publisher
iet
ISSN
1750-0443
Type
jour
DOI
10.1049/mnl.2012.0353
Filename
6294609
Link To Document