• DocumentCode
    1279474
  • Title

    Tensile and compressive behaviour of silicon carbide nanocones with 120° disclination

  • Author

    Yanling Tian ; Ribo Wei ; Weiguo Gao ; Eichhorn, Volkmar ; Fatikow, Sergej ; Dawei Zhang

  • Author_Institution
    Sch. of Mech. Eng., Tianjin Univ., Tianjin, China
  • Volume
    7
  • Issue
    8
  • fYear
    2012
  • fDate
    8/1/2012 12:00:00 AM
  • Firstpage
    798
  • Lastpage
    801
  • Abstract
    The tensile and compressive behaviour of silicon carbide nanocones (SiCNCs) under axial strain has been investigated using classic molecular dynamics simulations. For the tensile behaviour, the influences of the cone height on the failure strain, and failure force as well as failure strain energy have been systematically explored. Both the failure strain and the strain energy of SiCNCs are found to decrease with the increasing cone height. However, the failure force is marginally affected by the cone height. For the compressive behaviour of the SiCNCs, the deformation patterns in the buckling and postbuckling stages are extensively examined. The influences of the cone height on compressive behaviour have been explored. It is noted that the increased cone height has significant effect on the critical strain, and critical force as well as critical strain energy per atom of SiCNCs.
  • Keywords
    buckling; molecular dynamics method; nanostructured materials; silicon compounds; wide band gap semiconductors; SiC; axial strain; compressive behaviour; cone height; critical force; critical strain energy; deformation patterns; disclination; failure force; failure strain energy; molecular dynamics simulations; postbuckling stage; silicon carbide nanocone atom; tensile behaviour;
  • fLanguage
    English
  • Journal_Title
    Micro & Nano Letters, IET
  • Publisher
    iet
  • ISSN
    1750-0443
  • Type

    jour

  • DOI
    10.1049/mnl.2012.0353
  • Filename
    6294609