AlGaN-GaN UV light-emitting diodes grown on SiC by metal-organic chemical vapor deposition

Author

Zhu, Ting Gang ; Denyszyn, Jonathan C. ; Chowdhury, Uttiya ; Wong, Michael M. ; Dupuis, Russell D.

Author_Institution

Microelectron. Res. Center, Texas Univ., Austin, TX, USA

Volume

8

Issue

2

fYear

2002

Firstpage

298

Lastpage

301

Abstract

We report the study of the electrical and optical characteristics of AlGaN-GaN quantum-well (QW) ultraviolet light-emitting diodes grown on SiC by metal-organic chemical vapor deposition. These devices exhibit room-temperature electroluminescence emission peaked at λ = 363 nm with a narrow linewidth of Δλ = 9 nm under high-current-density dc injection. We have also applied a Mg-doped AlGaN-GaN superlattice structure as a p-cladding layer and vertical-geometry hole conduction improvement has been verified. A comparative study of the performance of light-emitting devices with single-QW and multiple-QW structures indicates that the single-QW structure is preferred

Keywords

III-V semiconductors; MOCVD; aluminium compounds; gallium compounds; light emitting diodes; magnesium; semiconductor quantum wells; semiconductor superlattices; spectral line breadth; 363 nm; AlGaN-GaN UV light-emitting diodes; AlGaN-GaN:Mg; Mg-doped AlGaN-GaN superlattice structure; SiC; electrical characteristics; high-current-density dc injection; light-emitting devices; metal-organic chemical vapor deposition; multiple-QW structures; narrow linewidth; optical characteristics; p-cladding layer; room-temperature electroluminescence emission; single-QW structures; vertical-geometry hole conduction; Aluminum gallium nitride; Biomedical optical imaging; Chemical vapor deposition; Light emitting diodes; Optical films; Semiconductor materials; Silicon carbide; Stimulated emission; Substrates; Superlattices;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/2944.999184

Filename

999184