• DocumentCode
    1280421
  • Title

    High-speed operation of resonant tunnelling flip-flop circuit employing MOBILE (monostable-bistable transition logic element)

  • Author

    Maezawa, K. ; Matsuzaki, H. ; Arai, K. ; Otsuji, T. ; Yamamoto, M.

  • Author_Institution
    NTT Syst. Electron. Labs., Kanagawa, Japan
  • Volume
    33
  • Issue
    20
  • fYear
    1997
  • fDate
    9/25/1997 12:00:00 AM
  • Firstpage
    1733
  • Lastpage
    1734
  • Abstract
    A new flip-flop circuit employing a monostable-bistable transition logic element is proposed which was fabricated with resonant tunnelling diodes/HEMT integration technology on an InP substrate. Error free operations up to 18 Gbit/s were demonstrated at room temperature
  • Keywords
    HEMT integrated circuits; field effect logic circuits; flip-flops; integrated logic circuits; resonant tunnelling diodes; sequential circuits; 18 Gbit/s; InP; MOBILE; error free operations; monostable-bistable transition logic element; resonant tunnelling diodes/HEMT integration; resonant tunnelling flip-flop circuit;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19971176
  • Filename
    629564
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1280421