• DocumentCode
    1280601
  • Title

    Elaboration of alumina nanowire field normal to a generic substrate

  • Author

    Buttard, Denis

  • Author_Institution
    CEA-Grenoble/INAC/SiNaPS-MINATEC, Grenoble, France
  • Volume
    6
  • Issue
    6
  • fYear
    2011
  • fDate
    6/1/2011 12:00:00 AM
  • Firstpage
    441
  • Lastpage
    443
  • Abstract
    Nanoporous alumina film was realised on a silicon substrate. The structure investigated by scanning electron microscopy is presented and reveals homogeneous pores on the entire sample surface. The pore-cell is polygonal and has sometimes a hexagonal shape. The pore-cell is limited by six-edges, leading to alumina nanowires brushes normal to the substrate after an enlargement of the pores. Owing to the geometry of the initial pore structure, the resulting nanowires have an exponential shape with a foot larger than the top, leading to good mechanical behaviour. The alumina annealing has also been investigated by grazing incidence X-ray diffraction measurements and reveals the presence of the γ-Al2O3 phase for a temperature upper than 800°C.
  • Keywords
    X-ray diffraction; alumina; annealing; nanowires; scanning electron microscopy; silicon; Al2O3; Si; alumina nanowire field; annealing; grazing incidence X-ray diffraction; nanoporous alumina film; pore structure; pore-cell; scanning electron microscopy; silicon substrate;
  • fLanguage
    English
  • Journal_Title
    Micro & Nano Letters, IET
  • Publisher
    iet
  • ISSN
    1750-0443
  • Type

    jour

  • DOI
    10.1049/mnl.2011.0179
  • Filename
    5960468