• DocumentCode
    1280720
  • Title

    Short-channel Al0.5Ga0.5N-GaN MODFETs with power density >3 W/mm at 18 GHz

  • Author

    Wu, Y.F. ; Keller, B.P. ; Fini, P. ; Pusl, J. ; Le, M. ; Nguyen, N.X. ; Nguyen, C. ; Widman, D. ; Keller, S. ; DenBaars, S.P. ; Mishra, U.K.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
  • Volume
    33
  • Issue
    20
  • fYear
    1997
  • fDate
    9/25/1997 12:00:00 AM
  • Firstpage
    1742
  • Lastpage
    1743
  • Abstract
    The authors have demonstrated 0.25 μm gate-length Al0.5 Ga0.5N/GaN MODFETs on sapphire substrates which exhibit CW output power densities >3 W/mm at 18 GHz, the highest reported to date for microwave FETs in the K band. This confirms the promise of the high Al-content AlGaN/GaN MODFET structure
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; microwave field effect transistors; microwave power transistors; power HEMT; 0.25 micron; 18 GHz; Al0.5Ga0.5N-GaN; CW output power densities; K band; microwave FETs; short-channel MODFETs;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19971127
  • Filename
    629570
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1280720