Pulsed operation lasing in a cleaved-facet InGaN/GaN MQW SCH laser grown on 6H-SiC

Author

Bulman, G.E. ; Doverspike, K. ; Sheppard, S.T. ; Weeks, T.W. ; Kong, H.S. ; Dieringer, H.M. ; Edmond, J.A. ; Brown, J.D. ; Swindell, J.T. ; Schetzina, J.F.

Author_Institution

Cree Res. Inc., Durham, NC, USA

Volume

33

Issue

18

fYear

1997

fDate

8/28/1997 12:00:00 AM

Firstpage

1556

Lastpage

1557

Abstract

Room temperature pulsed-operation lasing has been achieved for the first time in an InGaN laser grown on a 6H-SiC substrate. The laser structure is an 8-well InGaN/GaN MQW having Al_0.06Ga_0.94N waveguide and Al_0.13Ga_0.87N cladding layers. The index-guided laser having uncoated cleaved facets emits at 402 nm with a threshold current I_th of 1.2 A (42 V), corresponding to a current density of 48 kA/cm². A narrow line width of 0.8 Å is observed at 1.09 I_th. Far field measurement indicate that the devices operate in the TEM₀₁ mode with FWHP of 5.7 and 19° for the in-plane and perpendicular directions, respectively

Keywords

III-V semiconductors; gallium compounds; indium compounds; laser cavity resonators; laser transitions; quantum well lasers; silicon compounds; spectral line breadth; substrates; waveguide lasers; 1.2 A; 402 nm; 42 V; 6H-SiC substrate; Al_0.06Ga_0.94N; Al_0.06Ga_0.94N waveguide; Al_0.13Ga_0.87N; Al_0.13Ga_0.87N cladding layers; InGaN-GaN; SiC; TEM₀₁ mode; cleaved-facet MQW SCH laser; index-guided laser; pulsed-operation lasing; room temperature operation; semiconductor laser;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19971025

Filename

629656