A graphical method for estimating charge collected by diffusion from an ion track

Author

Edmonds, Larry D.

Author_Institution

Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA

Volume

43

Issue

4

fYear

1996

fDate

8/1/1996 12:00:00 AM

Firstpage

2346

Lastpage

2357

Abstract

The diffusion equation has some applications relevant to charge collection from ion tracks in silicon devices. This problem has been treated in the past for cases in which the entire upper surface can be represented as a sink for minority carriers. The present paper treats the case in which there are a number of disconnected upper junctions separated by reflective surfaces. Numerical results, presented as plots of charge-collection efficiency contours, are given for several device geometries. Such plots, combined with a simple superposition, provide charge-collection estimates for arbitrary track length, location, and direction. The mathematical theory applies to any geometry and can be used by the reader to obtain additional plots and/or analytical expressions. The diffusion coefficient can be an arbitrary function of carrier density

Keywords

minority carriers; silicon radiation detectors; Si devices; carrier density; charge collection; charge-collection efficiency contours; device geometries; diffusion; diffusion coefficient; disconnected upper junctions; graphical method; ion track; minority carriers; reflective surfaces; sink; superposition; track direction; track length; track location; upper surface; Boundary conditions; Charge carrier density; DRAM chips; Geometry; Nonlinear equations; Random access memory; SRAM chips; Silicon devices; Single event upset; Surface treatment;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.531783

Filename

531783