• DocumentCode
    1283625
  • Title

    MOW amplifier optical bistability

  • Author

    Adams, M.J.

  • Volume
    27
  • Issue
    15
  • fYear
    1991
  • fDate
    7/18/1991 12:00:00 AM
  • Firstpage
    1363
  • Lastpage
    1365
  • Abstract
    The authors have reported the first demonstration, to their knowledge, of optical bistability in an InGaAs-InGaAsP MOW laser amplifier. By comparison with bulk InGaAsP devices, the bistability occurs at somewhat higher input powers and greater detuning, the high-frequency rolloff for the present device is comparable with that for bulk amplifiers, but this is thought to be associated with the specific structure used and not a limiting feature of MQW amplifiers in general. Comparison of experiment and theory shows good agreement for the frequency-dependence of hysteresis.
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical bistability; semiconductor junction lasers; InGaAs-InGaAsP; MOW laser amplifier; frequency-dependence; hysteresis; optical bistability; semiconductor lasers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19910858
  • Filename
    81243