DocumentCode
1283625
Title
MOW amplifier optical bistability
Author
Adams, M.J.
Volume
27
Issue
15
fYear
1991
fDate
7/18/1991 12:00:00 AM
Firstpage
1363
Lastpage
1365
Abstract
The authors have reported the first demonstration, to their knowledge, of optical bistability in an InGaAs-InGaAsP MOW laser amplifier. By comparison with bulk InGaAsP devices, the bistability occurs at somewhat higher input powers and greater detuning, the high-frequency rolloff for the present device is comparable with that for bulk amplifiers, but this is thought to be associated with the specific structure used and not a limiting feature of MQW amplifiers in general. Comparison of experiment and theory shows good agreement for the frequency-dependence of hysteresis.
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical bistability; semiconductor junction lasers; InGaAs-InGaAsP; MOW laser amplifier; frequency-dependence; hysteresis; optical bistability; semiconductor lasers;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19910858
Filename
81243
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