A ferroelectric DRAM cell for high-density NVRAMs

Author

Moazzami, Reza ; Hu, Chenming ; Shepherd, William H.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

Volume

11

Issue

10

fYear

1990

Firstpage

454

Lastpage

456

Abstract

The operation of a ferroelectric DRAM (dynamic random access memory) cell for nonvolatile RAM (NVRAM) applications is described. Because polarization reversal only occurs during nonvolatile store/recall operations and not during read/write operations, ferroelectric fatigue is not a serious endurance problem. For a 3-V power supply, the worst-case effective silicon dioxide thickness of the unoptimized lead zirconate titanate film studied is less than 17 AA. The resistivity and endurance properties of ferroelectric films can be optimized by modifying the composition of the film. This cell can be the basis of a very-high-density NVRAM with practically no read/write cycle limit and at least 10/sup 10/ nonvolatile store/recall cycles.<>

Keywords

DRAM chips; ferroelectric storage; lead compounds; random-access storage; zirconium compounds; 17 A; 3 W; PZT-SiO/sub 2/; PbZrO3TiO3-SiO2; ferroelectric DRAM cell; ferroelectric fatigue; ferroelectric films; high-density NVRAMs; nonvolatile recall operations; nonvolatile store operations; polarization reversal; read operations; write operations; DRAM chips; Fatigue; Ferroelectric films; Ferroelectric materials; Nonvolatile memory; Polarization; Power supplies; Random access memory; Read-write memory; Silicon compounds;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.62994

Filename

62994